OBSOLETE
Polar TM HiPerFET TM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXFR30N110P
V DSS
I D25
R DS(on)
t rr
=
=
1100V
16A
400 m Ω
300 ns
Fast Intrinsic Diode
Symbol
Test Conditions
Maximum Ratings
ISOPLUS247
V DSS
V DGR
V GSS
V GSM
I D25
I DM
I AR
T J = 25 ° C to 150 ° C
T J = 25 ° C to 150 ° C, R GS = 1M Ω
Continuous
Transient
T C = 25 ° C
T C = 25 ° C, pulse width limited by T JM
T C = 25 ° C
1100
1100
± 30
± 40
16
75
15
V
V
V
V
A
A
A
E153432
Isolated Tab
E AS
T C = 25 ° C
1.5
J
G = Gate
D = Drain
dV/dt
P D
T J
T JM
T stg
T L
T SOLD
V ISOL
F C
Weight
I S ≤ I DM , V DD ≤ V DSS , T J ≤ 150 ° C
T C = 25 ° C
Maximum lead temperature for soldering
Plastic body for 10s
50/60 Hz, RMS, 1 minute
Mounting force
15
320
-55 ... +150
150
-55 ... +150
300
260
2500
20..120/4.5..27
5
V/ns
W
° C
° C
° C
° C
° C
V~
N/lb.
g
S = Source
Features
? Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
? Low drain to tab capacitance(<30pF)
? Rugged polysilicon gate cell structure
? Unclamped Inductive Switching (UIS)
rated
? Fast intrinsic Rectifier
Advantages
?
?
?
Easy assembly
Space savings
High power density
Symbol Test Conditions
(T J = 25 ° C, unless otherwise specified)
Characteristic Values
Min. Typ. Max.
Applications:
BV DSS
V GS = 0V, I D = 3mA
1100
V
High Voltage Switched-mode and
resonant-mode power supplies
V GS(th)
I GSS
V DS = V GS , I D = 1mA
V GS = ± 30V, V DS = 0V
3.5
6.5
± 200
V
nA
High Voltage Pulse Power Applications
High Voltage Discharge circuits in
Lasers Pulsers, Spark Igniters, RF
I DSS
R DS(on)
V DS = V DSS
V GS = 0V
V GS = 10V, I D = 15A, Note 1
T J = 125 ° C
50 μ A
2.5 mA
400 m Ω
Generators
High Voltage DC-DC converters
High Voltage DC-AC inverters
? 2011 IXYS CORPORATION, All rights reserved
DS99898OBS(05/11)
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相关代理商/技术参数
IXFR30N50 制造商:IXYS 制造商全称:IXYS Corporation 功能描述:HiPerFET Power MOSFETs ISOPLUS247
IXFR30N50Q 功能描述:MOSFET 30 Amps 500V 0.16 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFR30N60P 功能描述:MOSFET 600V 30A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFR32N100P 功能描述:MOSFET 32 Amps 1000V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFR32N100Q3 功能描述:MOSFET Q3Class HiPerFET Pwr MOSFET 1000V/23A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFR32N50Q 功能描述:MOSFET 30 Amps 500V 0.15 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFR32N50Q_04 制造商:IXYS 制造商全称:IXYS Corporation 功能描述:HiPerFET Power MOSFETs ISOPLUS247
IXFR32N80P 功能描述:MOSFET 20 Amps 800V 0.29 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube